Method of selective gas etching on a silicon nitride layer

Details Method of selective gas etching on a silicon nitride layer Method of selective gas etching on a silicon nitride layer

1977-12-01

1979-11-13

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156657, H01L 21306, C03C 1500, C03C 2506

Patent

active

041742516

ABSTRACT:
The process of etching a silicon nitride layer disposed upon a silicon substrate is completed in two steps by using a gas atmosphere composed of changing portions of CF.sub.4 and O.sub.2.

REFERENCES:
patent: 3795557 (1974-03-01), Jacob
patent: 4028155 (1977-06-01), Jacob
IBM Technical Disclosure Bulletin, vol. 17, No. 7, Dec. 1974, Plasma Etching Process by H. A. Clark, p. 1955.

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