Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2008-04-17
2011-12-06
Stark, Jarrett (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S319000, C438S763000, C257S522000
Reexamination Certificate
active
08071459
ABSTRACT:
A method of sealing an air gap in a layer of a semiconductor structure comprises providing a first layer of the semiconductor structure having at least one air gap for providing isolation between at least two conductive lines formed in the first layer. The at least one air gap extends into the first layer from a first surface of the first layer. The method further comprises forming a barrier layer of a barrier dielectric material over the first surface of the first layer and the at least one air gap. The barrier dielectric material is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap. In another embodiment, the at least one air gap extends from a first surface of the first layer to at least a portion of side surfaces of the at least two conductive lines to expose at least a portion of the side surfaces, and a barrier layer of a barrier dielectric material is formed over the exposed portions of the side surfaces of each of the at least two conductive lines.
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Braeckelmann Greg
Orlowski Marius
Wild Andreas
Freescale Semiconductor Inc.
Stark Jarrett
Tobergte Nicholas
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