Method of sealing a semiconductor substrate

Details Method of sealing a semiconductor substrate Method of sealing a semiconductor substrate

1997-12-31

2000-04-25

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438613, 438637, 438640, 438902, H01L 2144

Patent

active

060543760

ABSTRACT:
A method of sealing a substrate, comprising the steps of depositing a first amount of a first material, having a first dielectric constant, on the substrate to cover a bond pad and a metal line on the substrate and fill a gap between the metal line and the bond pad. The first amount of material forming an inclined surface extending from an edge of the bond pad over the bond pad, depositing a second amount of the first material next to the inclined surface to cause a foot of the inclined surface to move along the inclined surface, etching the first material to cause the foot of the inclined surface to drop onto the bond pad, thereby cleaning a region of the bond pad adjacent the foot of the inclined surface, forming a layer on the first material and sealing on the cleared region of the bond pad, the layer being of a second material which is resistant to moisture and which has a second dielectric constant which is greater than the first dielectric constant, and etching the second layer and the first material to clear an area of the bond pad within the sealing region.

REFERENCES:
patent: 5347100 (1994-09-01), Fukuda et al.
patent: 5444023 (1995-08-01), Homma
patent: 5686356 (1997-11-01), Jain et al.
patent: 5854131 (1998-12-01), Dawson et al.

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