Method of rough polishing semiconductor wafers to reduce surface

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

216 89, C03C 2506

Patent

active

055713734

ABSTRACT:
A method of rough polishing a semiconductor wafer to reduce roughness on a surface of the wafer prior to finish polishing the wafer by applying a polishing solution to a polishing material, contacting the polishing material and the polishing solution with the surface of the wafer as the wafer moves relative to the polishing material to reduce low frequency surface roughness of the wafer, applying a second polishing solution to the polishing material, and contacting the polishing material and the second polishing solution with the surface of the wafer as the wafer moves relative to the polishing material to further reduce the low frequency surface roughness, wherein the wafer has an average surface roughness not greater than 1.0 nm Ra, as measured on a 1 mm.times.1 mm scan with an optical interferometer, after being rough polished.

REFERENCES:
patent: 3170273 (1965-02-01), Walsh et al.
patent: 4968381 (1990-11-01), Prigge et al.
patent: 5032203 (1991-07-01), Doy et al.
patent: 5297361 (1994-03-01), Baldy et al.
patent: 5376222 (1994-12-01), Miyajima et al.
patent: 5383993 (1995-01-01), Katada et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of rough polishing semiconductor wafers to reduce surface does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of rough polishing semiconductor wafers to reduce surface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of rough polishing semiconductor wafers to reduce surface will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2012373

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.