Static information storage and retrieval – Read/write circuit
Patent
1993-02-22
1995-02-14
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
36518907, 365900, 365218, G11C 1600, G06F 1216
Patent
active
053901487
ABSTRACT:
A memory card includes an S-RAM in addition to an EEPROM. When old data constituting part of data that has been recorded in the EEPROM is to be rewritten, the old data to be rewritten is read out of the EEPROM and applied to the S-RAM, where the old data is temporarily stored. The old data in the S-RAM is rewritten to new data, and the new data is applied to and written in the EEPROM. A comparator circuit determines whether all bits of the new data rewritten in the S-RAM and all bits of the new data written in the EEPROM coincide. If all bits coincide, this is verification that the changed data has been stored in the EEPROM correctly. Thus, the reliability with which data is rewritten in the EEPROM is improved.
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patent: 5197026 (1993-03-01), Butler
Patent Abstracts of Japan, vol. 8, No. 179 (P-295) (1616) 17 Aug. 1984 JP-A-59-071180, 21 Apr. 1984.
Fuji Photo Film Co. , Ltd.
Nguyen Viet Q.
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