Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2006-03-07
2006-03-07
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S723000, C450S145000
Reexamination Certificate
active
07008803
ABSTRACT:
Methods of etching a semiconductor structure using ion milling with a variable-position endpoint detector to unlayer multiple interconnect layers, including low-k dielectric films. The ion milling process is controlled for each material type to maintain a planar surface with minimal damage to the exposed materials. In so doing, an ion beam mills a first layer and detects an endpoint thereof using an optical detector positioned within the ion beam adjacent the first layer to expose a second layer of low-k dielectric film. Once the low-k dielectric film is exposed, a portion of the low-k dielectric film may be removed to provide spaces therein, which are backfilled with a material and polished to remove the backfill material and a layer of the multiple interconnect metal layers. Still further, the exposed low-k dielectric film may then be removed, and the exposed metal vias polished.
REFERENCES:
patent: 4874947 (1989-10-01), Ward et al.
patent: 5948217 (1999-09-01), Winer et al.
patent: 6180976 (2001-01-01), Roy
patent: 6281025 (2001-08-01), Ring et al.
patent: 6565720 (2003-05-01), Ring
patent: 6630395 (2003-10-01), Kane et al.
patent: 6746961 (2004-06-01), Ni et al.
Eng Chung-Ping
Engel Brett H.
Ginsberg Barry Jack
Kane Terence Lawrence
Macpherson Dermott A.
Chen Kin-Chan
Ulrich Lisa J.
LandOfFree
Method of reworking structures incorporating low-k... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of reworking structures incorporating low-k..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reworking structures incorporating low-k... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3610055