Method of reworking PROMS

Details Method of reworking PROMS Method of reworking PROMS

1979-08-14

1981-03-10

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 156662, 156664, 156665, 427 90, 427 93, H01L 21283, H01L 21302

Patent

active

042552290

ABSTRACT:
PROM wafers having fuses on raised oxide are reworked by stripping the fuses and connectors, non-selectively etching the oxide layer to form a substantially planar, oxide surface resulting from the differential etching rate of the heavily phosphorus doped raised oxide surface compared to the remainder of lightly doped oxide, increasing the oxide layer thickness and forming new fuses and connectors on the new oxide.

REFERENCES:
patent: 3497407 (1970-02-01), Esch et al.
patent: 4056413 (1977-11-01), Yoshimura
Spencer, "Smoothing of Irregular . . . Surfaces" IBM Technical Disclosure Bulletin vol. 20 No. 11B 4/78 p. 4842.

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