Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2006-02-14
2006-02-14
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S690000, C438S706000
Reexamination Certificate
active
06998347
ABSTRACT:
A method of reworking an integrated circuit device is described. A substrate having a dielectric layer, a barrier layer, a conductive layer and an anti-reflective layer formed thereon, is provided. The method of reworking the barrier layer, the conductive layer and the anti-reflective layer comprises removing the anti-reflection layer by performing a dry etching process, removing the conductive layer by performing a wet etching process, and then removing the barrier layer by performing a chemical machine polishing process.
REFERENCES:
patent: 6004882 (1999-12-01), Kim et al.
patent: 6753249 (2004-06-01), Chen et al.
patent: 6798065 (2004-09-01), Hsia et al.
Chen Yi-Nan
Ho Hsin-Jung
Hsu Min-Yi
Huang Kun-Shin
Tzou Kaanlu
Jianq Chyun IP Office
Nanya Technology Corporation
Smith Bradley K.
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