Method of resistless gate metal etch for fets

Details Method of resistless gate metal etch for fets Method of resistless gate metal etch for fets

1997-03-10

1999-04-27

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438606, 438607, 438695, 438718, H01L 2120

Patent

active

058973664

ABSTRACT:
A method of resistless gate metal etch in the formation of a field effect transistor is disclosed, which includes providing a first layer of a first semiconductor material having a surface. A second layer of a second semiconductor material is formed on the surface and resistlessly patterned to define a masked and an unmasked portions. The unmasked portion of the second layer is etched away to the first layer to enable gate formation.

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patent: 5356509 (1994-10-01), Terranova et al.
patent: 5466639 (1995-11-01), Ireland
patent: 5580419 (1996-12-01), Berenz
patent: 5604154 (1997-02-01), Takahashi et al.
patent: 5759880 (1998-06-01), Shiralagi et al.

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