Method of replacing failed memory cells in semiconductor memory

Error detection/correction and fault detection/recovery – Data processing system error or fault handling – Reliability and availability

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714 7, 714 8, 714710, 365200, G11C 1140

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active

061158283

ABSTRACT:
A memory having a plurality of memory cells and a plurality of redundant memory cells accesses a redundant memory cell in lieu of a failed memory cell. The memory is tested for failed memory cells. Addresses of detected failed memory cells are stored in a first set of registers, and addresses of redundant memory cells are stored in a second, corresponding set of registers. An external address is compared with the address stored in the first set of registers and if there is a match, the corresponding redundant memory cell address stored in the second register set is used to access the memory, in lieu of the external memory address.

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