Method of replacing atmosphere of chamber apparatus, chamber...

Details Method of replacing atmosphere of chamber apparatus, chamber... Method of replacing atmosphere of chamber apparatus, chamber...

2006-05-02

2006-05-02

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S711000, C118S715000

Reexamination Certificate

active

07037810

ABSTRACT:
An atmosphere of an inert gas inside a chamber room in a chamber apparatus is replaced with an outside air by opening a discharge passage in the chamber room and by closing a gas supply passage for supplying the inert gas. The outside air is thus forcibly sent to the chamber room to thereby replace the inert gas remaining inside the chamber room with the outside air.

REFERENCES:
patent: 3810327 (1974-05-01), Giansante
patent: 3988900 (1976-11-01), Kamata et al.
patent: 6434944 (2002-08-01), White
patent: 6535270 (2003-03-01), Murayama
patent: 6704088 (2004-03-01), Tanimoto
patent: 1999/0068950 (1999-09-01), None

Affiliated with

Also associated with

Rating

Method of replacing atmosphere of chamber apparatus, chamber... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of replacing atmosphere of chamber apparatus, chamber..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of replacing atmosphere of chamber apparatus, chamber... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3538130