Method of repairing semiconductor memory, electron-beam memory r

Details Method of repairing semiconductor memory, electron-beam memory r Method of repairing semiconductor memory, electron-beam memory r

1997-05-21

1999-11-16

Dutton, Brian

Semiconductor device manufacturing: process

Repair or restoration

438 12, H01L 2100

Patent

active

059856777

ABSTRACT:
A semiconductor memory chip has fuses and a redundancy memory cell which can replace a normal memory cell that is found defective by cutting off the fuses. If the normal memory cell is defective, the fuses are cut off thereby to connect the redundancy memory cell instead of the normal memory cell which is defective. The entire surface of the semiconductor memory chip is coated with a resist layer. The coated the resist layer is exposed at regions of the fuses to an energy beam, and then developed form a resist pattern. The semiconductor memory chip is etched at the regions using the resist pattern as a mask for thereby cutting off the fuses. The fuses may be spaced at intervals of 2 .mu.m or smaller, and can be cut off without causing damage to a layer beneath the fuses.

REFERENCES:
patent: 4748597 (1988-05-01), Saito et al.
patent: 5698984 (1997-12-01), Bryant et al.
patent: 5837423 (1998-11-01), Okamoto
patent: 5840627 (1998-11-01), Huggins

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