Method of repairing deep subsurface defects in a silicon...

Details Method of repairing deep subsurface defects in a silicon... Method of repairing deep subsurface defects in a silicon...

2008-05-29

2010-12-14

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S547000, C438S563000, C257SE21145

Reexamination Certificate

active

07851339

ABSTRACT:
Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing atmosphere while the substrate is coated by a sacrificial oxide coating containing easily diffusible atoms that can form negatively charged ions and can diffuse deep into the substrate. In one embodiment, the easily diffusible atoms comprise at least 5% by atomic concentration of chlorine atoms in the sacrificial oxide coating and the nitrogen releasing atmosphere includes NO. The high temperature anneal is carried out for less than 10 hours at a temperature less than 1100° C.

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