Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-02-21
2006-02-21
Ho, Hoai (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185130, C365S185230, C365S185290, C365S225700
Reexamination Certificate
active
07002844
ABSTRACT:
A NOR-type flash memory device includes a global decoder circuit that is coupled to global wordlines. The global decoder circuit drives the global wordlines using wordline voltages that will be applied to local wordlines in each operation mode, and has wordline select switches each corresponding to the global wordlines. A local decoder circuit couples the local wordlines to the global wordlines in response to a sector select signal, and a sector generates a control signal in accordance with address information for selecting a memory cell array. A switch circuit includes a plurality of depletion MOS transistors each being coupled between corresponding first and second wordline. The depletion MOS transistors are commonly controlled by a control signal. Each of the wordline select switches is made of two NMOS transistors.
REFERENCES:
patent: 5586075 (1996-12-01), Miwa
patent: 5621690 (1997-04-01), Jungroth et al.
patent: 5808945 (1998-09-01), Arase
patent: 5886923 (1999-03-01), Hung
patent: 5982701 (1999-11-01), Eto
patent: 6219286 (2001-04-01), Fuchigami et al.
patent: 6320800 (2001-11-01), Saito et al.
patent: 6388472 (2002-05-01), Kang
patent: 6515911 (2003-02-01), Campardo et al.
patent: 2001/0001263 (2001-05-01), Guliani et al.
Ho Hoai
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
LandOfFree
Method of repairing a failed wordline does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of repairing a failed wordline, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of repairing a failed wordline will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3659724