Method of removing spacers and fabricating MOS transistor

Details Method of removing spacers and fabricating MOS transistor Method of removing spacers and fabricating MOS transistor

2007-03-27

2007-03-27

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

Reexamination Certificate

active

10905185

ABSTRACT:
A method of removing spacers after forming a MOS transistor on a wafer. The MOS transistor comprises a gate disposed on the substrate, spacers disposed on the sidewalls of the gate and a source and a drain region in the substrate beside the spacers. The spacers are removed by performing a wet etching process in the dark such that during the spacer removal process, the source and the drain region in a MOS transistor can be prevented from damages.

REFERENCES:
patent: 4908326 (1990-03-01), Ma et al.

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