Method of removing resist mask and a method of manufacturing sem

Details Method of removing resist mask and a method of manufacturing sem Method of removing resist mask and a method of manufacturing sem

1994-06-24

1997-05-13

Niebling, John

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438704, 438725, 438714, H01L 21312

Patent

active

056288719

ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device including a process of removing a photoresist mask or a photosensitive polyimide mask remaining after implanting impurity ions into a semiconductor layer or the like, and has an object to prevent generation of oxides of impurities and photoresist explosion and arranging it so that no residue remains. The present invention comprises the steps of forming a mask composed of photosensitive organic matter on a layer, implanting impurity ions into the layer through the mask, and removing the mask through processing including three steps of: exposing the mask to a plasma activated gas containing hydrogen, exposing to the mask to a plasma activated gas containing oxygen, and exposing the mask to a solution containing nitric acid under conditions sufficient to dissolve alumina which had formed on the mask during exposure of the mask to oxygen.

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patent: 4861732 (1989-08-01), Fujimura et al.
patent: 4938839 (1990-07-01), Fujimura et al.
patent: 4980022 (1990-12-01), Fujimura et al.
S. Wolf "Silicon Processing for the VLSI Era; Process Technology", vol. 1., 534, 1986.

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