Method of removing polymer of semiconductor device

Details Method of removing polymer of semiconductor device Method of removing polymer of semiconductor device

1996-11-20

1999-06-01

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Removal of imaged layers

430313, 430330, G03F 700

Patent

active

059087358

ABSTRACT:
A method of removing a polymer of a semiconductor device is disclosed including the steps of: forming a photoresist pattern on a to-be-etched layer; etching the to-be-etched layer using a mixed gas containing carbon/fluorine compound and oxygen gas with the use of the photoresist pattern; and removing the photoresist pattern at a temperature of below 200 C., and at the same time, dry-etching a polymer, the polymer being generated during the etching of the to-be-etched layer, the photoresist pattern being removed in a dry etching chamber.

REFERENCES:
patent: 5702869 (1997-12-01), Chien

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