Method of removing photoresist at the edge of wafers

Details Method of removing photoresist at the edge of wafers Method of removing photoresist at the edge of wafers

1999-01-25

2000-11-28

Wu, Shean C.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Finishing or perfecting composition or product

216 88, 216 92, G03C 500, H01L 21302, C23F 102

Patent

active

061533610

ABSTRACT:
A method of removing photoresist at the edge of waters in an integrated circuit the method comprising the following steps. A substrate having at least a MOS component region thereabove is provided. A photoresist layer is formed over the substrate. A pattern is defined on the photoresist layer by exposure and development. The photoresist layer at the edge of the substrate is removed by a chemical reagent and centrifugal effect.

REFERENCES:
patent: 4510176 (1985-04-01), Cuthbert et al.
patent: 5328871 (1994-07-01), Tanigawa et al.
patent: 5425846 (1995-06-01), Koze et al.
patent: 5879577 (1999-03-01), Weng et al.

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