Method of removing photoresist and photoresist rework method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Removal of imaged layers

Reexamination Certificate

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C430S331000, C510S175000, C510S176000

Reexamination Certificate

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07413848

ABSTRACT:
A method of removing photoresist is provided. In the whole process of removing the photoresist, plasma is not used. Instead, a first solution is used in a first removal step to remove a photoresist layer. Then, a second solution is used in a second removal step to completely remove the photoresist layer. The first solution and the second solution have different polarities, and the polarity of the first solution is large than that of the second solution.

REFERENCES:
patent: 5362608 (1994-11-01), Flaim et al.
patent: 5378315 (1995-01-01), Hendrix et al.
patent: 5637442 (1997-06-01), Bhatt et al.
patent: 6127097 (2000-10-01), Bantu et al.
patent: 6140027 (2000-10-01), Baik et al.
patent: 6159646 (2000-12-01), Jeon et al.
patent: 6432209 (2002-08-01), Sahbari
patent: 6444557 (2002-09-01), Biolsi et al.
patent: 6929901 (2005-08-01), Lui et al.
patent: 7011935 (2006-03-01), Schlicht et al.
patent: 7122484 (2006-10-01), Perng et al.
patent: 2002/0068244 (2002-06-01), Machac et al.
patent: 2004/0229762 (2004-11-01), Rutter, Jr.
patent: 2006/0110690 (2006-05-01), Haraguchi et al.

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