Method of removing photo resist

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

1566551, 1566561, 216 58, 216 77, 134 11, H01L 2100

Patent

active

054964385

ABSTRACT:
A method of removing photoresist (20) from a metal layer (16) formed on a substrate (1) and having a pattern defined by means of a corrosive gas plasma etch. The method consists of etching the resist (20) in an oxygen gas plasma for a period of time and at a sufficiently high temperature to remove all residual corrosive gas absorbed in the photoresist and below the temperature at which the metal beings to flow. An etching time of 3 minutes at 300.degree. C. is typically used.

REFERENCES:
patent: 4348473 (1982-09-01), Okumura et al.
patent: 5221424 (1993-06-01), Rhoades
patent: 5248384 (1993-09-01), Lin et al.

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