Method of removing etching residues

Details Method of removing etching residues Method of removing etching residues

1995-11-01

1998-01-06

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 1566621, 437228, 437985, 205124, 205157, 205223, H01L 21306

Patent

active

057050279

ABSTRACT:
The method is to selectively etch the etching residue in non-conductive state occurring in semiconductor manufacturing process. A silicon substrate cassette is used in such selective etching.
In removing the etching residue in non-conductive state occurring in semiconductor manufacturing process, by applying a positive potential to part of conductive silicon substrates in an etching solution, the contact surfaces between the silicon substrates and the portion electrically connected thereto and the chemical etching solution are anodically oxidized to protect with a passive film, while only the etching residue in non-conductive state is selectively removed by isotropic etching, thereby achieving the purpose.

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