Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-04-04
2006-04-04
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S704000, C438S718000
Reexamination Certificate
active
07022612
ABSTRACT:
Organic etch residues are often left within vias formed by etching through resist masks. Since the etch is designed to expose an underlying metal layer and is directional in order to produce vertical via sidewalls, the residue often incorporates metal. The present invention discloses a method of removing such etch residues while passivating exposed metal, including exposing the residue to ammonia. In the disclosed embodiment, ammonia and oxygen are mixed in a plasma step, such that the resist can be burned off at the same time as the residue treatment. The residue can thus be easily rinsed away.
REFERENCES:
patent: 5017265 (1991-05-01), Park et al.
patent: 5174856 (1992-12-01), Hwang et al.
patent: 5200031 (1993-04-01), Latchford et al.
patent: 5228950 (1993-07-01), Webb et al.
patent: 5269878 (1993-12-01), Page et al.
patent: 5281850 (1994-01-01), Kanamori et al.
patent: 5310626 (1994-05-01), Fernandes et al.
patent: 5358599 (1994-10-01), Cathey et al.
patent: 5514247 (1996-05-01), Shan et al.
patent: 5545289 (1996-08-01), Chen et al.
patent: 5661083 (1997-08-01), Chen et al.
patent: 5667630 (1997-09-01), Lo
patent: 5783459 (1998-07-01), Suzuki et al.
patent: 5811022 (1998-09-01), Savas et al.
patent: 5814156 (1998-09-01), Elliott et al.
patent: 5849367 (1998-12-01), Dixit et al.
patent: 5849639 (1998-12-01), Molloy et al.
patent: 5977041 (1999-11-01), Honda
patent: 5986344 (1999-11-01), Subramanion et al.
patent: 6613681 (2003-09-01), Hillyer et al.
patent: WO 93/17453 (1993-09-01), None
Hillyer Larry
Hinerman Max F.
Ghyka Alexander
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
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