Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-19
2007-06-19
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S687000, C438S692000
Reexamination Certificate
active
10603924
ABSTRACT:
A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.
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patent: 6096633 (2000-08-01), Hsu
patent: 6277746 (2001-08-01), Skrovan et al.
patent: 2002/0111026 (2002-08-01), Small et al.
Hsu Chia-Lin
Hu Shao-Chung
Tsai Teng-Chun
Wei Yung-Tsung
J.C. Patents
Nguyen Thanh
United Microelectronics Corp.
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