Method of removing an oxide and method of filling a trench...

Details Method of removing an oxide and method of filling a trench... Method of removing an oxide and method of filling a trench...

2008-01-14

2010-06-29

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S291000, C438S296000, C438S424000, C438S477000, C257SE21252, C257SE21293

Reexamination Certificate

active

07745305

ABSTRACT:
A method of removing a portion of an oxide layer includes forming first byproducts by reacting a reaction gas with the oxide layer, the reaction gas including fluorine and nitrogen, reacting the reaction gas with the first byproducts to form second byproducts, and removing the second byproducts.

REFERENCES:
patent: 5766971 (1998-06-01), Ahlgren et al.
patent: 7183214 (2007-02-01), Nam et al.
patent: 2005/0074948 (2005-04-01), Ko et al.
patent: 2008/0171438 (2008-07-01), Sinha et al.
patent: 10-2005-0055074 (2005-06-01), None
patent: 10-2005-0067555 (2005-07-01), None
patent: 10-2006-0104232 (2006-10-01), None

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