Method of removing a silylated or germanium implanted photoresis

Details Method of removing a silylated or germanium implanted photoresis Method of removing a silylated or germanium implanted photoresis

1994-06-03

1996-02-13

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Removal of imaged layers

430315, 430324, 430330, G03F 742

Patent

active

054910471

ABSTRACT:
A photoresist layer containing implanted silicon or germanium group coated on a wafer can be entirely removed from the wafer using a dry developing process using oxygen plasma by first out-diffusing or extracting the implanted silicon or germanium. Specifically, the implanted silicon- or germanium is removed from the photoresist by heating the photoresist in the same pre-silylation bake chamber used during the patterning process. Thereafter, the entire photoresist can be removed from the wafer by a dry developing process using oxygen plasma without contaminating the plasma strip equipment.

REFERENCES:
patent: 4599118 (1986-07-01), Han et al.
patent: 5166038 (1992-11-01), Clodgo
patent: 5217851 (1993-06-01), Kishimura
patent: 5252433 (1993-10-01), Fujioka

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