Method of removing a patterned multilevel resist from a surface

Details Method of removing a patterned multilevel resist from a surface Method of removing a patterned multilevel resist from a surface

1990-12-05

1992-11-03

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156651, 156653, 156657, 1566611, 156663, 156668, 430329, B44C 122, C03C 1500, C03C 2506, B29C 3700

Patent

active

051604043

ABSTRACT:
A method for removing a patterned multilevel resist formed on a substrate where layer of a substrate, the multilevel resist has a lower resist layer and an upper resist layer formed on the lower resist layer, and where the upper resist layer contains silicon atoms. The method includes forming a resin layer on the lower resist layer and on a surface exposed from the patterned multilevel resist, and etching the resin layer and the patterned multilevel resist by a first dry etching process using halogen containing gas until the upper resist layer is removed. The resin layer and the multilevel resist, which have remained after the first dry etching process, are etched by a second dry etching process using oxygen containing gas.

REFERENCES:
patent: 4789427 (1988-12-01), Fujimura et al.
patent: 4861424 (1989-08-01), Fujimura et al.
patent: 4976818 (1990-12-01), Hashimoto et al.

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