Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-11-01
2009-06-09
Goudreau, George A. (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S698000, C438S704000, C438S714000, C438S721000, C438S724000, C438S755000, C438S757000
Reexamination Certificate
active
07544621
ABSTRACT:
A method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process is disclosed, in which the gate electrode, a metal silicide layer, a spacer, a silicon nitride cap layer, and a dielectric layer have been formed. The method includes performing a chemical mechanical polishing process to polish the dielectric layer using the silicon nitride cap layer as a polishing stop layer to expose the silicon nitride cap layer over the gate electrode; removing the exposed silicon nitride cap layer to expose the metal silicide layer; and performing a first etching process to remove the metal silicide layer on the gate electrode.
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Chen Cheng-Kuen
Shiau Wei-Tsun
Wu Chih-Ning
Yu Wen-Fu
Goudreau George A.
Hsu Winston
United Microelectronics Corp.
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