Method of removing a catalyst substance from the channel region

Details Method of removing a catalyst substance from the channel region Method of removing a catalyst substance from the channel region

1995-02-13

1996-12-03

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 21, 437 41, 437233, 437228, 437967, 437 88, 437973, 148DIG16, 148DIG60, H01L 21306, H01L 2184

Patent

active

055807925

ABSTRACT:
Method of fabricating a semiconductor device, such as a thin-film transistor, having improved characteristics and improved reliability. The method is initiated with formation of a thin amorphous silicon film on a substrate. A metallization layer containing at least one of nickel, iron, cobalt, and platinum is selectively formed on or under the amorphous silicon film so as to be in intimate contact with the silicon film, or these metal elements are added to the amorphous silicon film. The amorphous silicon film is thermally annealed to crystallize it. The surface of the obtained crystalline silicon film is etched to a depth of 20 to 200 .ANG., thus producing a clean surface. An insulating film is formed on the clean surface by CVD or physical vapor deposition. Gate electrodes are formed on the insulating film.

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