Method of releasing gas trapped during deposition

Details Method of releasing gas trapped during deposition Method of releasing gas trapped during deposition

1998-11-13

2000-12-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438795, H01L 2144

Patent

active

061566500

ABSTRACT:
A method of making a semiconductor device to reduce or prevent defects caused by the ejection of deposited material. The method includes a first layer of material deposited over a substrate in the presence of a gaseous ambient. A portion of the gaseous ambient is trapped by the first layer. This entrapped portion could cause defects during subsequent elevated temperature processing as the gas attempts to escape from the first layer. To prevent or reduce this problem, after depositing the first layer and before depositing a second layer over the first layer, the first layer is heated to remove at least a portion of the gaseous ambient trapped in the layer. For best results, the first layer is heated to a temperature at least as high as the highest temperature of later processing steps and at a pressure of no more than 1 torr. This method is particularly useful for layers formed by physical vapor deposition.

REFERENCES:
patent: 5723367 (1998-03-01), Wada et al.
Chang et al., ULSI Technology, McGraw Hill, pp. 382, 457 (1996).
Wolf, Silicon Processing for the VLSI Era, Lattice Press, vol. 2: Process Integration, pp. 188-217 (1990).
Wolf, Silicon Processing for the VLSI Era, Lattice Press, vol. 2: Process Integration, pp. 240-260 (1990).
Wolf, Silicon Processing for the VLSI Era, Lattice Press, vol. 2: Process Integration, pp. 334-337 (1990).

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