Method of reinforcing a mechanical microstructure

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C438S456000, C257S029000

Reexamination Certificate

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06878566

ABSTRACT:
A mechanical microstructure including a deformable first layer overhanging a second layer and defining a cavity set back from an external face of the deformable first layer and having an abutment stud projecting into the cavity, in which a wire is connected to a portion of an internal face of the deformable first layer. The portion of the first layer is opposite a bottom area of the cavity into which the abutment stud projects, but the abutment stud remains at a distance from the deformable first layer. A method of producing the mechanical microstructure is also disclosed.

REFERENCES:
patent: 6136631 (2000-10-01), Mueller et al.
patent: 6156586 (2000-12-01), Kolb
patent: 6225145 (2001-05-01), Choi et al.
patent: 2 785 449 (1998-10-01), None
patent: WO 9517014 (1995-06-01), None
patent: WO 9533282 (1995-12-01), None
Paper, “A Monolithic Fully-Integrated Vacuum-Sealed CMOS Pressure Sensor,” A.V. Chavan1and K.D. Wise2, Center for Integrated MicroSystems, The University of Michigan, Ann Arbor, Michigan and IC Design Center, Delphi Delco Electronic Systems, Kokomo, Indiana.

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