Method of refreshing charge-trapping non-volatile memory...

Details Method of refreshing charge-trapping non-volatile memory... Method of refreshing charge-trapping non-volatile memory...

2007-05-15

2007-05-15

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185280, C365S185020, C365S185090, C365S185190

Reexamination Certificate

active

11160097

ABSTRACT:
A method of using a non-volatile memory that utilizes a charge-trapping layer for data storage is described. A refresh step is performed, after the non-volatile memory is subject to multiple write/erase cycles causing hard-to-erase electrons in the charge-trapping layer, to eliminate the hard-to-erase electrons. After the refresh step, the non-volatile memory is used again.

REFERENCES:
patent: 4250569 (1981-02-01), Sasaki et al.
patent: 4881203 (1989-11-01), Watanabe et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6636440 (2003-10-01), Maayan et al.
patent: 6700155 (2004-03-01), King et al.
patent: 6967611 (2005-11-01), Atriss et al.
patent: 2005/0270849 (2005-12-01), Lue
patent: 2006/0146603 (2006-07-01), Kuo et al.

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