Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon
Reexamination Certificate
2006-02-09
2010-02-16
Vanoy, Timothy C (Department: 1793)
Chemistry of inorganic compounds
Silicon or compound thereof
Elemental silicon
C423S348000, C423S350000
Reexamination Certificate
active
07662356
ABSTRACT:
The present invention provides a method of refining low purity Si by a slag, in particular removing B, which suppresses wear of the reaction vessel due to the slag and produces high purity Si used for solar battery materials etc. at a low cost, comprising adding SiO2and an alkali oxide or alkali carbonate as a slag material into molten Si to form a slag during which adding one or more types of materials among materials the same as the reaction vessel material used or ingredients included in the reaction vessel material into the slag so as to remove the impurities in the molten Si.
REFERENCES:
patent: 2005/0139148 (2005-06-01), Fujiwara et al.
patent: 2 116 956 (1983-10-01), None
patent: 58-130114 (1983-08-01), None
patent: 9-202611 (1995-08-01), None
patent: 09-202611 (1997-08-01), None
patent: 2003-238139 (2003-08-01), None
patent: 2004-262746 (2004-09-01), None
patent: WO 03066523 (2003-08-01), None
Suzuki et al, “Thermodynamics for Removal of Boron from Metallurgical Silicon by Flux Treatment,” J. Japan Inst. Metals, vol. 54, No. 2, (1990), pp. 168-172 (w/ English language Abstract).
Kondou Jirou
Okajima Masaki
Okazawa Kensuke
Tokumaru Shinji
Hanor Serena L
Kenyon & Kenyon LLP
Nippon Steel Materials Co., Ltd.
Vanoy Timothy C
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