Method of reducing variable retention characteristics in...

Details Method of reducing variable retention characteristics in... Method of reducing variable retention characteristics in...

2005-05-24

2005-05-24

Nguyen, Tan T. (Department: 2818)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S149000

Reexamination Certificate

active

06898138

ABSTRACT:
The illustrated embodiments relate to reducing variable retention time in dynamic random access memory (DRAM) integrated circuit devices. Memory cells that comprise the DRAM device are placed in a reverse bias condition. While under reverse bias, the DRAM device is maintained at an elevated temperature for a predetermined time.

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