Method of reducing the conductivity of a semiconductor and...

Details Method of reducing the conductivity of a semiconductor and... Method of reducing the conductivity of a semiconductor and...

2005-05-24

2005-05-24

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C436S167000, C436S174000, C436S510000

Reexamination Certificate

active

06897132

ABSTRACT:
Disclosed is a method of reducing the conductivity/charge of a layer of group III-V semiconductor doped with Sn. The method includes the steps of: forming an region of SiO2on the semiconductor layer; annealing at least the semiconductor layer and the region of SiO2at a temperature sufficiently high to cause atoms of the Sn dopant to leach from the semiconductor layer into the region of SiO2; and removing the region of SiO2after the annealing step is performed. The method can be used, for example, during the manufacture of HEMT, PHEMT, MESFET and HBT devices.

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