Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2004-11-16
2008-12-23
Chu, John S (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S270100, C430S291000, C430S296000, C430S321000, C430S942000
Reexamination Certificate
active
07468227
ABSTRACT:
We are able to reduce the average process bias in a patterned reticle by treating the developed, patterned photoresist which is used to transfer a pattern to the reticle with a silicon-containing reagent prior to the pattern transfer. The process bias is a measure of the difference between a nominal feature critical dimension (CD) produced in a patterned reticle and the nominal isofocal CD for the feature. Improvement of the average process bias is directly related to an improved resolution in the mask features. The reduction in average process bias achievable using the method of the invention typically ranges from about 30% to about 70%. This reduction in average process bias enables the printing of smaller features.
REFERENCES:
patent: 5356758 (1994-10-01), Orvek
patent: 5427649 (1995-06-01), Kim et al.
patent: 6258514 (2001-07-01), Montgomery
patent: 6342562 (2002-01-01), Kozawa et al.
patent: 6541077 (2003-04-01), Kozawa et al.
patent: 6586156 (2003-07-01), Angelopoulos et al.
patent: 6605394 (2003-08-01), Montgomery et al.
patent: 6620575 (2003-09-01), Kim et al.
patent: 6641971 (2003-11-01), Huang et al.
patent: 6703169 (2004-03-01), Fuller et al.
patent: 2002/0120058 (2002-08-01), Kozawa et al.
patent: 2002/0197556 (2002-12-01), Huang et al.
patent: 2003/0049561 (2003-03-01), Angelopoulos et al.
patent: 2004/0063003 (2004-04-01), Montgomery et al.
patent: 2005/0186515 (2005-08-01), Watkins
patent: 2001297970 (2001-10-01), None
A. Kornblit et al., “Role of pattern fidelity in the printing of optical proximity corrected photomasks”, J. Vac. Sci. Technol. B, vol. 13, No. 6, pp. 2944-2948 (Nov./Dec. 1995).
R. Kris et al., “Corner Roundness and Contact Area algorithms for Reticle Metrology through the use of Region Connectivity Extraction”, Proceedings of SPIE, vol. 5256 (2003).
J. Muñoz et al., “Dry development of photosensitive polyimides for high resolution and aspect ratio applications”, J. Vac. Sci. Technol. B., vol. 13, No. 6, pp. 2179-2183 (Nov./Dec. 1995).
J. Ochsenhirt et al., “Optimization of the e-beam sensitive bilayer CARL process for stencil mask making”, 16thEuropean Conference on Mask Technology for Integrated Circuits and Microcomponents, Proceedings of SPIE, vol. 3996, pp. 80-89 (2000).
C. Sauer et al., “Evaluation of commercial and experimental resist materials for use in MEBES® mask making”, Proceedings of SPIE, vol. 2621, pp. 52-61 (1985).
I. Yonekura et al., “Pattern Shape Analysis Tool for Quantitative Estimate of Photomask and Process”, Photomask and Next-Generation Lithography Mask Technology VIII, Proceedings of SPIE, vol. 4409, pp. 204-211 (2001).
Buxbaum Alexander
Montgomery Melvin Warren
Applied Materials Inc.
Chu John S
Church Shirley L.
LandOfFree
Method of reducing the average process bias during... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of reducing the average process bias during..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reducing the average process bias during... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4041275