Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-25
2000-02-01
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257500, 257501, H01L 2701, H01L 2712, H01L 310392, H01L 2976, H01L 2358
Patent
active
060206144
ABSTRACT:
A low cost means is described to semi-isolate the substrate regions of an integrated circuit occupied by a plurality of circuit types with separate power supply connections but with interconnecting signals. The separate power supply connections are made to minimize noise generated by one circuit from coupling into another circuit. One example of integrated circuits with a noise coupling issue are the so called "mixed signal" circuits in which the switching transient noise of digital circuits can interfere with the performance of on board analog circuits. Because of a common substrate, noise injected into the substrate by one circuit can affect the performance of another. This invention reduces the effect of substrate noise by providing an isolation zone around a given circuit type of an integrated circuit by removing the field implant in this zone and placing a deep implant of the same polarity type as substrate in the N channel transistor regions. This implant is tied to local ground or Vss buses and is not present in the isolation zone.
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John Borland and Ron Koelsch, "MeV Implantation Technology: Next-Generation Manufacturing With Current-Generation Equipment", Solid-State Technology, p. 28, Dec., 1993.
Fenty Jesse G.
Saadat Mahshid
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