Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-08-15
2006-08-15
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257SE21545, C257SE21564
Reexamination Certificate
active
07091106
ABSTRACT:
STI divot formation is eliminated or substantially reduced by employing a very thin nitride polish stop layer, e.g., no thicker than 400 Å. The very thin nitride polish stop layer is retained in place during subsequent masking, implanting and cleaning steps to form dopant regions, and is removed prior to gate oxide and gate electrode formation.
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Bonser Douglas J.
Cheek Jon D.
Dakshina-Murthy Srikanteswara
Groschopf Johannes F.
Pellerin John G.
Advanced Micro Devices , Inc.
Nelms David
Tran Long
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