Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1998-08-17
2000-06-06
Niebling, John F.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438782, 438906, H01L 2131, H01L 21469
Patent
active
060718315
ABSTRACT:
A method of forming an interlevel dielectric slayer of spin-on-glass is described which avoids spiral defects from occurring in the layer of spin-on-glass. Before the spin-on-glass is deposited and with the wafer spinning at a low angular velocity a first volume of isopropyl alcohol is deposited on the wafer. The wafer continues to spin at the low angular velocity for a short time. With the wafer continuing to spin at the low angular velocity a second volume, less than the first volume, of spin-on-glass is deposited on the wafer. The wafer continues to spin at the low angular velocity for a short time and then is spun at a high angular velocity for a longer time. The wafer is then removed from the apparatus used to deposit the spin-on-glass and processing of the wafer continues. Spiral defects in the layer of spin-on-glass are avoided.
REFERENCES:
patent: 5264246 (1993-11-01), Ikeno
patent: 5272118 (1993-12-01), Ziger
patent: 5535525 (1996-07-01), Gardner
patent: 5646071 (1997-07-01), Lin et al.
patent: 5780105 (1998-07-01), Wang
patent: 5807792 (1998-09-01), Ilg et al.
patent: 5843527 (1998-12-01), Sanada
patent: 5874128 (1999-02-01), Kim
patent: 5912049 (1999-06-01), Shirley
patent: 5925410 (1999-07-01), Akram et al.
patent: 5990014 (1999-11-01), Wilson et al.
patent: 6004622 (1999-12-01), Yen et al.
patent: 6022806 (2000-02-01), Sato et al.
Chang et al, "ULSI Technology", McGraw-Hill Companies Inc, 1996, pp. 92-93.
Chiang Chen-Chia
Lin Chung-An
Ackerman Stephen B.
Jones Josetta
Niebling John F.
Prescott Larry J.
Saile George O.
LandOfFree
Method of reducing spiral defects by adding an isopropyl alcohol does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of reducing spiral defects by adding an isopropyl alcohol, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reducing spiral defects by adding an isopropyl alcohol will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2213355