Method of reducing internal stress in materials

Details Method of reducing internal stress in materials Method of reducing internal stress in materials

2005-05-17

2005-05-17

Zaragian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S652000, C438S800000, C438S938000

Reexamination Certificate

active

06893986

ABSTRACT:
Methods are provided for adjusting and controlling the stress between layers of material in a multilayer structure. A first stress is configured in a region of stress on the substrate material. A second material is then deposited over the substrate. A second stress results between the substrate and the second material such that a net stress results where the net stress is a function of said first and second stresses. As such, the first stress can be configured to achieve a predetermined, desired net stress. For example, the first stress can be configured to cancel out the second stress such that the net stress is substantially zero.

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Amer et al., Induced stresses and structural changes in silicon wafers as a result of laser micro-machining, Applied Surface Science 187 (2002) 291-296.

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