Method of reducing impurity contamination in semiconductor proce

Details Method of reducing impurity contamination in semiconductor proce Method of reducing impurity contamination in semiconductor proce

1997-12-08

1999-11-02

Niebling, John F.

Semiconductor device manufacturing: process

With measuring or testing

438905, G01R 3126, H01L 2166

Patent

active

059769009

ABSTRACT:
A method of reducing impurities in films to be deposited within a chemical vapor deposition (CVD) device includes steps of cleaning the process chamber of the CVD device, and depositing, prior to wafer processing, a gettering layer of, for example, phosphorous containing glass on interior surfaces of the process chamber. The gettering layer getters mobile alkali ions and substantially reduces or prevents outdiffusion of alkali ions and other impurities. The phosphorous containing glass may also be doped with boron. A blocking layer, such as undoped silicate glass, silicon nitride, silicon oxynitride or the like may be deposited on the gettering layer to trap impurities and to prevent phosphorous contamination in a applications sensitive to such contamination. Alternatively, silicon nitride or silicon oxynitride may be deposited on interior surfaces of the process chamber without a gettering layer, to thereby substantially prevent outdiffusion of underlying moisture and impurities during subsequent deposition of films onto the wafers to be processed.

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