Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-07-26
2011-07-26
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000, C257S762000, C257SE23142
Reexamination Certificate
active
07986040
ABSTRACT:
During the patterning of via openings in sophisticated metallization systems of semi-conductor devices, the opening may extend through a conductive cap layer and an appropriate ion bombardment may be established to redistribute material of the underlying metal region to exposed sidewall portions of the conductive cap layer, thereby establishing a protective material. Consequently, in a subsequent wet chemical etch process, the probability for undue material removal of the conductive cap layer may be greatly reduced.
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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 021 568.6 dated Oct. 24, 2008.
Bartsch Christin
Fischer Daniel
Schaller Matthias
Advanced Micro Devices , Inc.
Potter Roy K
Williams Morgan & Amerson
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