Method of reducing electrostatic charge on ion-implanted devices

Details Method of reducing electrostatic charge on ion-implanted devices Method of reducing electrostatic charge on ion-implanted devices

1983-09-16

1988-11-22

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01T 3700

Patent

active

047868147

ABSTRACT:
Disclosed herein is a method of using an apparatus for ion implanation providing a flood of electrons to neutralize the charge on an ion-implanted wafer after implantation to prevent electrostatic sticking attraction between the wafer and the support mechanism.

REFERENCES:
patent: 3383180 (1983-05-01), Turner
patent: 3507709 (1970-04-01), Bower
patent: 3908183 (1975-09-01), Ennis, Jr.
patent: 4011449 (1977-03-01), Ko et al.
patent: 4118630 (1978-10-01), McKenna et al.
patent: 4135097 (1971-01-01), Forneris et al.
patent: 4283631 (1981-08-01), Turner
patent: 4361762 (1982-11-01), Douglas
Wu et al., "Electron-Flood Techniques to Neutralize Beam Charging During Ion Implantation", RCA Review, vol. 44, Mar. 1983.
"DF-3000, Ion Implantation System", Varian Extrion Div., Blackburn Indust. Park, Gloucester, MA 01930.

Affiliated with

Also associated with

Rating

Method of reducing electrostatic charge on ion-implanted devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of reducing electrostatic charge on ion-implanted devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reducing electrostatic charge on ion-implanted devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-436779