Method of reducing defects on semiconductor wafers

Details Method of reducing defects on semiconductor wafers Method of reducing defects on semiconductor wafers

1989-07-12

1989-12-05

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

252 792, 252 793, H01L 21306

Patent

active

048850560

ABSTRACT:
A reduction in the number of impurities and defects on a semiconductor wafer is provided by cleaning the wafer in a hydrochloric acid, hydrofluoric acid, and water solution. This HCl:HF:H.sub.2 O solution removes silicon dioxide as well as metallic impurities from the wafer surface, thus preventing the formation of defects on the wafer and increasing the quality and yield of semiconductor devices.

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patent: 4595454 (1986-06-01), Dautremont-Smith et al.
patent: 4704188 (1987-11-01), Carlson et al.
Kern, "Purifying Si and SiO.sub.2 Surface with Hydrogen Peroxide" Semiconductor International, Apr. 84, pp. 84-99.
Gould et al., "The Influence of Silicon Surface Cleaning Procedures on Silicon Oxidation".
J. Electrochem Soc. Solid State Science and Technology, vol. 134, No. 4, Apr. 87, pp. 1031-1033.
Mikata et al., "Thermal Cleaning of Si Surface in Ultra-High Vacuum" Proc. Electrochem Soc. Extended Abstracts, 85-7, Dec. 9, 1987, pp. 45-56.
Wolf et al., Silicon Processing for the VSLI Era, vol. 1, Lattice Press, Calif. 1986, pp. 514-520.

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