Method of reducing defects in PECVD TEOS films

Details Method of reducing defects in PECVD TEOS films Method of reducing defects in PECVD TEOS films

2011-04-12

2011-04-12

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S787000

Reexamination Certificate

active

07923376

ABSTRACT:
The present invention provides high deposition rate PECVD methods for depositing TEOS films. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing defects. According to various embodiments, the methods involve adding a relatively small amount of helium gas to the process gas. The addition of helium significantly reduces the number of defects in the film, particularly for high deposition rate processes.

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