Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-04-19
2011-04-19
Maldonado, Julio J (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S194000, C438S217000, C438S289000, C438S291000, C438S551000, C257SE21346, C257SE21618, C257SE21619, C257SE21633, C257SE21634
Reexamination Certificate
active
07927987
ABSTRACT:
Methods and devices for preventing channeling of dopants during ion implantation are provided. The method includes providing a semiconductor substrate and depositing a sacrificial scattering layer over at least a portion a surface of the substrate, wherein the sacrificial scattering layer includes an amorphous material. The method further includes ion implanting a dopant through the sacrificial scattering layer to within a depth profile in the substrate. Subsequently, the sacrificial scattering layer can be removed such that erosion of the substrate surface is less than one percent of a thickness of the sacrificial scattering layer.
REFERENCES:
patent: 5422301 (1995-06-01), Otsuki
patent: 5872047 (1999-02-01), Lee et al.
patent: 5950096 (1999-09-01), Huang et al.
patent: 6249030 (2001-06-01), Lee
patent: 6297132 (2001-10-01), Zhang et al.
patent: 6329225 (2001-12-01), Rodder
patent: 6797188 (2004-09-01), Shen et al.
patent: 2004/0043586 (2004-03-01), Ahmed et al.
patent: WO 2006060116 (2006-06-01), None
Wolf et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology, 1986 by Lattice Press, pp. 182-183, 199 and 532-533.
http://www.devicelink.com/mpb/archive/96/01/003.html.
Bae Dong Joo
Doshi Vikram N.
Walsh Shawn T.
Brady III Wade J.
Franz Warren L.
Maldonado Julio J
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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