Method of recrystallizing a polycrystalline, amorphous or small

Details Method of recrystallizing a polycrystalline, amorphous or small Method of recrystallizing a polycrystalline, amorphous or small

1983-05-09

1986-06-03

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG73, 156DIG102, 427 431, 427 86, 148 15, C30B 108

Patent

active

045927995

ABSTRACT:
For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the polysilicon layer comes into contact with the substrate, an electron beam of generally strip-shaped cross section is impacted on the polysilicon layer where the beam is focused into a fine impact line of intense energy extending transverse to the one direction in which the seeding locations are spaced apart, the substrate and electron beam are relatively displaced in a direction transverse to the impact line so that the impact line of the beam relatively scans at least a portion of the polysilicon layer transversely to the direction in which the seeding locations are spaced apart, and the speed with which the impact line relatively scans the polysilicon layer is determined so that the polysilicon layer is subjected to zone melting at the impact line of the electron beam for growing silicon single crystals by lateral epitaxial recrystallization of the polysilicon from the seeding locations.

REFERENCES:
patent: 2729748 (1956-01-01), Robinson
patent: 3144552 (1964-08-01), Schonberg et al.
patent: 3193717 (1965-07-01), Nunan
patent: 3600237 (1971-08-01), Davis et al.
patent: 3614423 (1971-10-01), Heymick et al.
patent: 3702412 (1972-11-01), Quintal
patent: 3745396 (1973-07-01), Quintal et al.
patent: 3769600 (1973-10-01), Denholm et al.
patent: 3780308 (1973-12-01), Nabco
patent: 3780334 (1973-12-01), Leboutet
patent: 4035829 (1977-07-01), Ipri et al.
patent: 4061944 (1977-12-01), Gay
patent: 4131909 (1978-12-01), Matsude et al.
patent: 4151422 (1979-04-01), Geto et al.
patent: 4199384 (1980-04-01), Hsu
patent: 4258266 (1981-03-01), Robinson et al.
patent: 4301369 (1981-11-01), Matsno
patent: 4309225 (1982-01-01), Fan et al.
patent: 4322881 (1982-04-01), Enomoto et al.
patent: 4323417 (1982-04-01), Lam
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4358326 (1982-11-01), Doo
patent: 4371421 (1983-02-01), Fan et al.
patent: 4375993 (1983-03-01), Mori et al.
patent: 4382186 (1983-05-01), Denholm et al.
patent: 4448632 (1984-05-01), Akaska
H. Schaber, D. Cutter, and W. M. Werner, Laser Annealing Study of the Grain Size Effect in Polycrystalline Silicon Schottky Diodes, J. Appl. Phys. 53 (12), Dec. 1982, pp. 8827-8834.

Affiliated with

Also associated with

Rating

Method of recrystallizing a polycrystalline, amorphous or small does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of recrystallizing a polycrystalline, amorphous or small , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of recrystallizing a polycrystalline, amorphous or small will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1231412