Method of reading data in ferroelectric memory device and...

Details Method of reading data in ferroelectric memory device and... Method of reading data in ferroelectric memory device and...

2006-04-18

2006-04-18

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

07031180

ABSTRACT:
A method of reading data in a ferroelectric memory device includes applying a read voltage to a ferroelectric capacitor, and detecting a voltage that reflects an amount of a dynamic change in capacitance of the ferroelectric capacitor to which the read voltage is applied. Since a voltage difference ΔV occurs at a time T between the case where the polarization of a memory cell which has stored first data is not reversed and the case where the polarization of a memory cell which has stored second data is reversed, a read margin increases.

REFERENCES:
patent: 6545933 (2003-04-01), Sekiguchi et al.
patent: 6614678 (2003-09-01), Kato et al.
patent: 6901002 (2005-05-01), Matsushita
patent: 2003/0223266 (2003-12-01), Yamamura et al.
patent: A 9-116107 (1997-05-01), None

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