Method of purging and passivating a semiconductor processing cha

Details Method of purging and passivating a semiconductor processing cha Method of purging and passivating a semiconductor processing cha

1996-06-21

1998-06-02

Warden, Jill

Cleaning and liquid contact with solids

Processes

Including use of vacuum, suction, or inert atmosphere

134 221, 134 2218, 134 30, 134 37, 34410, 34412, B08B 504, B08B 900

Patent

active

057592870

ABSTRACT:
A method for purging and passivating a vacuum chamber suitable for use in the production of integrated circuit structures on semiconductor wafers. The method includes flowing a heated, non-reactive gas, such as argon gas, through the chamber for purposes of decontaminating the chamber and subsequently filling the chamber with a selected gas such as nitrogen to passivate the chamber for storage or shipping purposes.

REFERENCES:
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patent: 5238503 (1993-08-01), Phenix et al.
patent: 5536330 (1996-07-01), Chen et al.
Singer, P., "Pump-down to Ultrahigh Vacuum in Minutes, Not Hours", Semiconductor International, Jul., 1992, p. 34.

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