Method of pulling up a single crystal semiconductor

Details Method of pulling up a single crystal semiconductor Method of pulling up a single crystal semiconductor

1998-04-15

1999-08-10

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, 117201, C30B 1526

Patent

active

059353228

ABSTRACT:
In the process of forming-the shoulder in which the diameter of a crystal is gradually extended from a small seed crystal to a predetermined value, the largest width of a bright ring, which is formed in a boundary between the melt and the crystal pulled up from the melt, is measured, and an arc width of an arbitrary portion of the bright ring located before the largest width portion is measured. When the largest width of the bright ring has reached a predetermined value, a measured value of the arc width at the arbitrary position of the bright ring is used as a reference value, and after that, automatic control is conducted so that the measured value of the arc width can be close to the reference value.

REFERENCES:
patent: 5170061 (1992-12-01), Baba
patent: 5240684 (1993-08-01), Baba et al.
patent: 5437242 (1995-08-01), Hofstetter et al.
patent: 5653799 (1997-08-01), Fuerhoff
patent: 5665159 (1997-09-01), Fuerhoff
patent: 5746825 (1998-05-01), Von Ammon et al.

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