Method of pulling semiconductor single crystals

Details Method of pulling semiconductor single crystals Method of pulling semiconductor single crystals

1997-12-15

1999-03-02

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 14, 117 15, C30B 1520

Patent

active

058764950

ABSTRACT:
This invention provides a method for pulling a single crystal silicon whose diameter is more than 200 mm. The single crystal silicon pulled by the method of this invention has a desired oxygen concentration and a uniform oxygen concentration distribution along its longitudinal axis. In the process of this invention, the single crystal silicon and the quartz crucible are driven to rotate in reverse directions, and the rotation speed of the single crystal silicon is set within the range of 8 to 16 rpm and to be more than twice the rotating speed of the crucible. The rotation speed of the crucible is set to be at its minimum value during pulling a body portion which begins from the beginning end of the single-crystal body and terminates at a location apart from the beginning end within a distance of 10% of the total length of the single-crystal body. Subsequently, the rotation speed of the crucible is gradually raised and is set to no more than a maximum value of 8 rpm.

REFERENCES:
patent: 5215620 (1993-06-01), Kodama et al.
patent: 5487355 (1996-01-01), Chiou et al.
patent: 5578284 (1996-11-01), Chandrasekhar et al.
patent: 5733368 (1998-03-01), Nagai et al.

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